Memory

In a bit of a surprise move, SK hynix this week has announced a new variation of LPDDR5 memory technology, which they are calling LPDDR5T. Low Power Double Data Rate 5 Turbo (LPDDR5T) further ramps up the clockspeeds for LPDDR5-type memory, with SK hynix stating that their new memory will be able to clock at high as 9.6Gbps/pin, 13% faster than their top-bin 8.5Gbps LPDDR5X. According to the company, the memory is sampling now to partners as a 16GB part, with mass production set to begin in the second half of this year. SK hynix is positioning LPDDR5T as an interim memory technology to cover the gap between LPDDR5X and the future development of LPDDR6, offering what amounts to a half-step up in memory bandwidth...

Fire At Kioxia & Western Digital NAND Fab - Impact on Supply to be Minimal

Kioxia has reportedly informed its customers that a production tool at one of its fabs caught fire early on Tuesday. The fire was promptly extinguished and no casualties were...

6 by Anton Shilov on 1/8/2020

CES 2020: Micron Begins to Sample DDR5 RDIMMs with Server Partners

Micron announced at CES that it had started sampling of its DDR5 Registered DIMMs with select partners. The very fact that Micron started sampling of DDR5 modules indicates that...

7 by Anton Shilov on 1/7/2020

Samsung’s Fab in Hwaseong Suffers Power Outage

Samsung had to stop production of DRAM and V-NAND memory at its fab near Hwaseong, South Korea, due to power outage earlier this week. Damage caused by disruption of...

48 by Anton Shilov on 1/2/2020

Kioxia: 3D Stacked Storage Class Memory, like 3D XPoint, Isn’t the Future

One of the key battlegrounds of the next decade is going to be storage: density, speed, and demand. Naturally all the major players in the space want to promote...

23 by Dr. Ian Cutress on 12/30/2019

Micron Obtains License to Sell DRAM & NAND to Huawei

The inclusion of Huawei into the U.S. Department of Commerce’s Entity List and consequent restrictions to work with the Chinese giant clearly made it much harder for the U.S.-based...

12 by Anton Shilov on 12/19/2019

ADATA Reveals XPG Hunter SO-DIMMs: Up to DDR4-3000, Up to 32 GB

ADATA has introduced its new family of SO-DIMMs for laptops and small form-factor desktops. The XPG Hunter DDR4 SO-DIMMs offer data transfer rates of up to 3000 MT/s and...

6 by Anton Shilov on 12/17/2019

Samsung to Expand 3D NAND Fab in China

Samsung reportedly plans to invest billions of dollars to expand its 3D NAND production facility in Xian, China. If the company proceeds with the plan, bit production capacity of...

5 by Anton Shilov on 12/17/2019

Team Group’s T-Force Xtreem ARGB Memory: Up to DDR4-4800, ‘Mirror Design’

With even "extreme" clockspeed DDR4 modules bordering on being commodity hardware these days, DRAM module manufacturers are increasingly using design as one of the primary ways to attract attention...

0 by Anton Shilov on 12/9/2019

ChangXin Memory Technologies (CXMT) is Ramping up Chinese DRAM Using Qimonda IP

ChangXin Memory Technologies (CXMT), previously known as Innotron, has started production of computer memory using a 19 nm manufacturing technology. The company has a roadmap for at least two...

15 by Anton Shilov on 12/2/2019

Spotted at Supercomputing 2019: A 256 GB Gen-Z Memory Module

As a millennial, everything in the media that ‘Gen Z’ does often gets lumped into the millennial category. Thankfully there’s another type of Gen-Z in the world: the cache...

11 by Dr. Ian Cutress on 11/29/2019

GlobalFoundries and SiFive to Design HBM2E Implementation on 12LP/12LP+

GlobalFoundries and SiFive announced on Tuesday that they will be co-developing an implementation of HBM2E memory for GloFo's 12LP and 12LP+ FinFET process technologies. The IP package will enable...

13 by Anton Shilov on 11/5/2019

GIGABYTE Enhances Aorus RGB Memory with Aorus Memory Boost Capability

One of the advantages of having a highly-integrated product stack is ability to fine tune performance of your devices when they work together. On the one hand, this allows...

6 by Anton Shilov on 11/1/2019

GlobalFoundries Teams Up with Singapore University for ReRAM Project

GlobalFoundries has announced that the company has teamed up with Singapore’s Nanyang Technological University and the National Research Foundation to develop resistive random access memory (ReRAM). The next-generation memory...

6 by Anton Shilov on 10/28/2019

Samsung Launches Single-Chip uMCP Packages with LPDDR4X DRAM & UFS 3.0 Storage

Samsung has introduced a new lineup of all-in-one memory packages for smartphones that integrate both DRAM and storage. The latest generation of uMCP devices now feature up to 12...

30 by Anton Shilov on 10/24/2019

SK Hynix Develops 16 Gb DDR4 Chips for 32 GB Modules

SK Hynix announced on Monday that it has completed development of its first monolithic 16 Gb chip. This chip is to be made using its 3rd Generation 10 nm-class...

8 by Anton Shilov on 10/22/2019

Team Group Quietly Launches 32 GB DDR4 Memory Modules

Team Group has quietly added 32 GB unbuffered DDR4 memory modules to its product catalogue and plans to start sales in the near future. The modules will feature JEDEC-standard...

8 by Anton Shilov on 10/22/2019

Royal Memory: G.Skill’s 32 GB DDR4-4000 CL15 Kit for AMD & Intel

Bucking the trend of ever higher clocked DDR4 memory kits, G.Skill has introduced a new high-end memory kit that is focused on lower memory latencies. Compatible with both Intel...

14 by Anton Shilov on 10/21/2019

Corsair 16GB DDR4-5000 Vengeance LPX Memory Kit: Built for AMD Ryzen 3000 and MSI

The high-tech industry loves milestones that are round numbers, be it frequency, number of cores, transistor count or something else. It is not that extra 100 MHz – 200...

38 by Anton Shilov on 10/11/2019

G.Skill Launches 32 GB DDR4 Modules, 256 GB Kits: Up to DDR4-4000

G.Skill has now rolled out its 32 GB unbuffered DDR4 modules in dual-channel and quad-channel memory kits. The modules are offered with data transfer rates from 2666 MT/s to...

27 by Anton Shilov on 10/9/2019

Samsung Develops 12-Layer 3D TSV DRAM: Up to 24 GB HBM2

Samsung on Monday said that it had developed the industry’s first 12-layer 3D packaging for DRAM products. The technology uses through silicon vias (TSVs) to create high-capacity HBM memory...

11 by Anton Shilov on 10/7/2019

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